tm h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers september 2007 ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers features high voltage: moc8204m, bv cer = 400v h11d1m, h11d2m, bv cer = 300v H11D3M, bv cer = 200v high isolation voltage: 7500 v ac peak, 1 second underwriters laboratory (ul) recognized file # e90700, volume 2 applications power supply regulators digital logic inputs microprocessor inputs appliance sensor systems industrial controls general description the h11dxm, 4n38m and moc8204m are photo- transistor-type optically coupled optoisolators. a gallium arsenide infrared emitting diode is coupled with a high voltage npn silicon phototransistor. the device is sup- plied in a standard plastic six-pin dual-in-line package. schematic emitter collector 1 2 3 anode cathode 4 5 6 base n/c
h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 2 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. note: 1. parameters meet or exceed jedec registered data (for 4n38m only). symbol parameter device value units tot al device t stg storage temperature all -55 to +150 ? t opr operating temperature all -40 to +100 ? t sol lead solder temperature (wave solder) all 260 for 10 sec ? p d t otal device power dissipation @ t a = 25? derate above 25? all 260 mw 3.5 mw/? emitter i f f orward dc current (1) all 80 ma v r reverse input voltage (1) all 6.0 v i f (pk) f orward current ?peak (1? pulse, 300pps) (1) all 3.0 a p d led power dissipation @ t a = 25? (1) derate above 25? all 150 mw 1.41 mw/? detector p d po w er dissipation @ t a = 25? all 300 mw derate linearly above 25? 4.0 mw/? v cer collector to emitter voltage (1) moc8204m 400 v h11d1m, h11d2m 300 H11D3M 200 4n38m 80 v cbo collector base voltage (1) moc8204m 400 v h11d1m, h11d2m 300 H11D3M 200 4n38m 80 v eco emitter to collector voltage (1) h11d1m, h11d2m, H11D3M, moc8204m 7v i c collector current (continuous) all 100 ma
h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 3 electrical characteristics (t a = 25? unless otherwise specified.) individual component characteristics t ransfer characteristics (t a = 25? unless otherwise speci?d.) *all typical values at t a = 25? note: 2. parameters meet or exceed jedec registered data (for 4n38m only). symbol characteristic test conditions device min. typ.* max. unit emitter v f f orward voltage (2) i f = 10ma all 1.15 1.5 v ? v f ? t a f orward voltage t emp. coef cient all -1.8 mv/? bv r reverse breakdown v oltage i r = 10? all 6 25 v c j j unction capacitance v f = 0v, f = 1mhz all 50 pf v f = 1v, f = 1mhz 65 pf i r reverse leakage current (2) v r = 6v all 0.05 10 ? detector bv cer breakdown voltage collector to emitter (2) r be = 1m ? , i c = 1.0ma, i f = 0 moc8204m 400 v h11d1m/2m 300 H11D3M 200 bv ceo no rbe, i c = 1.0ma 4n38m 80 bv cbo collector to base (2) i c = 100?, i f = 0 moc8204m 400 v h11d1m/2m 300 H11D3M 200 4n38m 80 bv ebo emitter to base i e = 100?, i f = 0 4n38m 7 v bv eco emitter to collector i e = 100?, i f = 0 all 7 10 v i cer leakage current collector to emitter (2) (r be = 1m ? ) v ce = 300v, i f = 0, t a = 25? moc8204m 100 na v ce = 300v, i f = 0, t a = 100? 250 ? v ce = 200v, i f = 0, t a = 25? h11d1m/2m 100 na v ce = 200v, i f = 0, t a = 100? 250 ? v ce = 100v, i f = 0, t a = 25? H11D3M 100 na v ce = 100v, i f = 0, t a = 100? 250 ? i ceo no r be , v ce = 60v, i f = 0, t a = 25? 4n38m 50 na symbol characteristics test conditions device min. typ.* max. units emitter ctr current transfer ratio, collector to emitter i f = 10ma, v ce = 10v, r be = 1m ? h11d1m/2m/3m, moc8204m 2 (20) ma (%) i f = 10ma, v ce = 10v 4n38m 2 (20) v ce(sat) saturation voltage (2) i f = 10ma, i c = 0.5ma, r be = 1m ? h11d1m/2m/3m, moc8204m 0.1 0.40 v i f = 20ma, i c = 4ma 4n38m 1.0 switching times t on non-saturated tu r n-on time v ce = 10v, i ce = 2ma, r l = 100 ? all 5 ? t off tu r n-off time all 5 ?
h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 4 dc electrical characteristics (t a = 25? unless otherwise specified.) (continued) isolation characteristics *all typical values at t a = 25? symbol characteristic test conditions device min. typ.* max. units v iso isolation voltage f = 60hz, t = 1 sec. all 7500 v ac peak r iso isolation resistance v i-o = 500 vdc all 10 11 ? c iso isolation capacitance f = 1mhz all 0.2 pf
h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 5 typical performance curves t a - ambient temperature (?c) normalize d i cer - dark current fig. 3 normalized output current vs. led input current i f - led input current (ma) 110 normalize d i cer - output curren t 0.01 0.1 1 10 normalized to: v ce = 10 v i f = 10 ma r be = 10 6 ? t a = 25?c t a - ambient temperature (?c) normalized i cer - output curren t fig. 4 normalized output current vs. temperature -60 -40 -20 0 20 40 60 80 100 0.1 1 normalized to: v ce = 10 v i f = 10 ma r be = 10 6 ? t a = 25?c i f = 10 ma i f = 5 ma i f = 20 ma t a - ambient temperature (?c) normalized i cbo - collector-base cu rrent fig. 6 normalized collector-base current vs. temperature -60 -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 normalized to: v ce = 10 v i f = 10 ma r be = 10 6 ? t a = 25?c i f = 50 ma i f = 10 ma i f = 5 ma fig. 5 normalized dark current vs. ambient temperature 10 20 30 40 50 60 70 80 90 100 110 0.1 1 10 100 1000 10000 v ce = 300 v v ce = 100 v v ce = 50 v normalized to: v ce = 100 v r be = 10 6 ? t a = 25?c v ce - collector voltage (v) normalized i cer - output curren t fig. 2 normalized output characteristics 0.1 1 10 100 0.01 0.1 1 10 normalized to: v ce = 10 v i f = 10 ma r be = 10 6 ? t a = 25?c i f = 50 ma i f = 5 ma i f = 10 ma i f - led forwardcurrent (ma) v f - forward voltage (v) fig. 1 led forward voltage vs. forward current 110 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = 55?c t a = 25?c t a = 100?c
h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 6 package dimensions through hole surface mount 0.4" lead spacing recommended pad layout for surface mount leadform note: all dimensions are in inches (millimeters). 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.006 (0.16) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 ( 1.78 ) 0.060 ( 1.52 ) 0.030 ( 0.76 ) 0.100 ( 2.54 ) 0.305 ( 7.75 ) 0.425 ( 10.79 )
h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 7 ordering information marking information option order entry identi?r (example) description no option h11d1m standard through hole device s h11d1sm surface mount lead bend sr2 h11d1sr2m surface mount; tape and reel t h11d1tm 0.4" lead spacing v h11d1vm vde 0884 tv h11d1tvm vde 0884, 0.4" lead spacing sv h11d1svm vde 0884, surface mount sr2v h11d1sr2vm vde 0884, surface mount, tape and reel h11d1 v x yy q 1 2 6 4 3 5 de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code
h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 8 carrier tape speci?ations re?w pro?e 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
h11d1m, h11d2m, H11D3M, 4n38m, moc8204m high voltage phototransistor optocouplers ?000 fairchild semiconductor corporation www.fairchildsemi.com h11dxm, 4n38m, moc8204m rev. 1.0.2 9 trademarks th ef ollowing are registered and unregistered trademarks and service marks fairchild semiconductor owns or is authorized to use and is not in t ended to be an exhaustive list of all such trademarks. acex build it now coreplus crossvolt ctl current transfer logic ecospark fairchild fairchild semiconductor fact quiet series fact fast fastvcore fps frfet global power resource sm green fps green fps e-series gto i-lo intellimax isoplanar m egabuck mi crocoupler microfet micropak m illerdrive moti on-spm optologic optopl anar pdp-spm po we r220 pow er247 poweredge powe r-spm po we rtrench pr ogrammable active droop qfet qs qt optoelectronics quiet series rapidconfigure smart start spm stealth s uperfet su persot -3 s upersot -6 s upersot -8 syncfet the power franchise tinyboost tinybuck tinylogic tinyopto tinypower tinypwm tinywire serdes uhc unifet vcx disc laimer fa i rchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any pro duct or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these speci fications do not expand t he terms of fairchild? wo rl dw ide terms and conditions, specifically the warranty therein, which covers these products. life support policy fa i rchild s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems wh ic h, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform wh en properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. pr oduct status definitions defi nition of terms da tasheet identification product status definition ad vance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. pr eliminary first production this datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to ma ke c hanges at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i31
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